Impact of Gate Microstructure on Complementary Metal-Oxide-Semiconductor Transistor Performance
| Autor: | Chenming Hu, Nick Kepler, Bin Yu, Tsu-Jae King, Dong Hyuk Ju |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Materials science
business.industry Transconductance Gate dielectric Transistor General Engineering General Physics and Astronomy Time-dependent gate oxide breakdown Hardware_PERFORMANCEANDRELIABILITY law.invention CMOS Depletion region Hardware_GENERAL law Gate oxide Hardware_INTEGRATEDCIRCUITS Optoelectronics Hardware_ARITHMETICANDLOGICSTRUCTURES Metal gate business Hardware_LOGICDESIGN |
| Zdroj: | Japanese Journal of Applied Physics. 36:L1150 |
| ISSN: | 1347-4065 0021-4922 |
| Popis: | This letter reports on the impact of gate microstructure on deep-submicron complementary metal-oxide-semiconductor (CMOS) device performance. Transistors with different gate microstructures (α-Si gate vs poly-Si gate) were fabricated using a 2.5 V sub-0.25 µ m CMOS process and their performances were compared. The α-Si gate provides better capability for suppressing boron penetration in p-channel metal-oxide-semiconductor field-effect transistors (MOSFET's), but the depletion effect is more severe than that of the poly-Si gate. A modified gate doping (MGD) effect, in which the difference of linear transconductance (g m) between transistors with two different gate microstructures shows a strong gate-length dependence, is reported for the first time and evaluated by the impact of grain boundary segregation on the electrically activated gate impurity density. The MGD effect makes the poly-Si gate more advantageous in the design of high-performance CMOS transistors with gate critical lengths shorter than 0.25 µ m. |
| Databáze: | OpenAIRE |
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