The influence of ion-implantation on the effective Schottky barrier height of NiGe/n-Ge contacts
| Autor: | Mengrao Tang, Honghao Cai |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010304 chemical physics
Passivation Chemistry business.industry Schottky barrier Doping General Physics and Astronomy chemistry.chemical_element Germanium 010402 general chemistry 01 natural sciences 0104 chemical sciences Ion implantation Impurity 0103 physical sciences Optoelectronics Physical and Theoretical Chemistry business |
| Zdroj: | Chemical Physics. 530:110626 |
| ISSN: | 0301-0104 |
| DOI: | 10.1016/j.chemphys.2019.110626 |
| Popis: | The mechanism for modulating the effective Schottky barrier height of NiGe/Ge contacts by incorporating impurities is still under debate. There is a view that impurities segregated at the NiGe/Ge interface act as donors or passivators that alleviate the Fermi-level pinning effect so as to significantly affect the electrical characteristics. Our study, however, clearly demonstrates that ion implantation damage is the primary factor in causing the lowering of the effective Schottky barrier, for NiGe/n-Ge contacts doped with Se or Si, although passivation behavior is observed for P doping. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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