Investigation of transient current characteristics with scaling-down poly-Si body thickness and grain size of 3D NAND flash memory
| Autor: | Myung-Hyun Baek, Daewoong Kwon, Jinkyu Kang, Byung-Gook Park, Sung-Bok Lee, Woojae Jang, Seung Hyun Kim, Sang-Ho Lee |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Hardware_MEMORYSTRUCTURES business.industry NAND gate Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Instability Grain size Electronic Optical and Magnetic Materials 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Materials Chemistry Optoelectronics Grain boundary Transient (oscillation) Crystallite Electrical and Electronic Engineering Current (fluid) 0210 nano-technology business Scaling |
| Zdroj: | Solid-State Electronics. 152:41-45 |
| ISSN: | 0038-1101 |
| Popis: | In order to verify the effects of polycrystalline Si (poly-Si) body thickness scale-down on read operation in 3D NAND flash memory which has tube type thin body, TCAD simulations and the measurements of fabricated devices are performed. ID-VG characteristics and transient drain current behaviors are investigated in 3D NAND devices with various body thicknesses and grain sizes. It has been known that drain current undershoot/overshoot is observed in poly-Si channel devices by falling/rising step gate bias. These phenomena are strongly related with transient of potential barrier height due to slow capture/emission rate of poly-Si grain boundary traps. As the body thickness decreases with the same grain size, the transient current instability, on-state current, and subthreshold-swing are improved. When the grain size is increased with the same body thickness, the transient current instability, on-state current, and subthreshold-swing are improved. |
| Databáze: | OpenAIRE |
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