Switching characteristics of silicon carbide power PiN diodes
| Autor: | James W. Kretchmer, D.M. Brown, A.W. Clock, A. Elasser, Mario Ghezzo, Nicole Krishnamurthy, T.P. Chow |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Materials science
Silicon business.industry PIN diode chemistry.chemical_element Insulated-gate bipolar transistor Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry law Materials Chemistry Electronic engineering Silicon carbide Optoelectronics Power semiconductor device Junction temperature Electrical and Electronic Engineering business Current density Diode |
| Zdroj: | Solid-State Electronics. 44:317-323 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/s0038-1101(99)00238-5 |
| Popis: | Recent progress in Silicon Carbide (SiC) material has made it feasible to build power devices with reasonable current density. This paper will present recent results including a comparison with state of the art silicon diodes. The effect of diode reverse recovery on the turn-on losses of a fast Si IGBT are studied both at room temperature and at 150°C. At room temperature, SiC diodes allow a reduction of IGBT turn on losses by as much as 6× and at 150°C junction temperature SiC diodes allow a turn-on loss reduction of between 16× and 3× when compared to fast and ultra fast silicon diodes respectively. Total losses due to reverse diode recovery were reduced by as much as 10× at 25°C and between 5× and 18× at 150°C. The yield and I – V characteristics of these diodes are also described. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect