Pressure-induced metallization in Erbium trihydride

Autor: A. P. Drozdov, Mikhail A. Kuzovnikov, Mikhail Eremets, M. Tkacz
Rok vydání: 2017
Předmět:
Zdroj: Solid State Communications. 263:23-26
ISSN: 0038-1098
DOI: 10.1016/j.ssc.2017.07.004
Popis: Electrical resistivity and Raman spectra of ErH 3 were studied in a diamond anvil cell under high pressure up to 140 GPa in the temperature range 4–300 K. A crossover from a semiconductor-like to a metallic temperature dependence of resistivity at fixed pressures was observed at about 50 GPa. In the pressure range 80–140 GPa a resistivity maximum was observed at the R ( T ) dependencies. The temperature corresponding to this maximum linearly increased with pressure increase, reaching 26 K at 140 GPa. No superconductivity was observed in the studied pressure-temperature range.
Databáze: OpenAIRE