CCl 4 -assisted CF 4 etching of silicon in a microwave-assisted LDE (laser dry etching)-process
| Autor: | Ernst Wolfgang Kreutz, D.A. Wesner, Wilhelm Pfleging |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Plasma etching
Silicon Analytical chemistry General Physics and Astronomy chemistry.chemical_element Surfaces and Interfaces General Chemistry Condensed Matter Physics Isotropic etching Surfaces Coatings and Films X-ray photoelectron spectroscopy chemistry Etching (microfabrication) Dry etching Reactive-ion etching Microwave |
| Zdroj: | Applied Surface Science. :496-500 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/0169-4332(95)00502-1 |
| Popis: | A combination of microwave excitation and a mask projection scheme is applied for laser-assisted laterally structured etching of silicon. Different feed gases are used, such as CF 4 , either nonactivated or activated in a microwave discharge. With these gases well-defined structures are obtained with etch rates of 0.1 μm min −1 . Using a gas mixture of CF 4 and CCl 4 , the etching rate can be increased to 1 μm min −1 at room temperature. Smooth etched profiles can be achieved with laser fluences −2 . The etched Si surfaces are characterized by ex-situ X-ray photoelecton spectroscopy (XPS) and the gas phase reactions are investigated with quadrupole mass spectroscopy (QMS). The formation of ClF 3 or ClF is discussed as a critical step within the microwave-assisted laser dry etching (MALDE). The presence of these species correlates with high Si etch rates. A numerical solution of the one-dimensional heat flow equation is used to obtain the laser-induced surface temperature distribution. A numerical model of etching based on thermal evaporation gives etch rates many orders of magnitude smaller than the observed etch rates. |
| Databáze: | OpenAIRE |
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