Effect of Dielectric Layers on the Performance of AlGaN-Based UV Schottky Photodiodes
| Autor: | Zahia Bougrioua, Eva Monroy, Ingrid Moerman, Elías Muñoz, M T Montojo, Fernando Calle, Jose Luis Pau, F. J. Sanchez, M Verdu, E. San Andrés, Franck Omnès |
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| Rok vydání: | 2001 |
| Předmět: |
Materials science
Passivation business.industry Annealing (metallurgy) Aluminium nitride Analytical chemistry Schottky diode Gallium nitride Dielectric Condensed Matter Physics Electron cyclotron resonance Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Plasma-enhanced chemical vapor deposition Optoelectronics business |
| Zdroj: | physica status solidi (a). 188:307-310 |
| ISSN: | 1521-396X 0031-8965 |
| DOI: | 10.1002/1521-396x(200111)188:1<307::aid-pssa307>3.0.co;2-t |
| Popis: | This work analyses the efficiency of AlGaN Schottky diode passivation by different dielectric layers. A significant reduction of leakage current and noise power spectral density was achieved with either SiO 2 from plasma-enhanced chemical vapour depostion (PECVD) or e-beam evaporation, or Si x N y from PECVD. Passivation with Si x N y obtained by electron cyclotron resonance deposition is less efficient, although it can be improved by annealing at 300 °C. E-beam evaporated SiO 2 provides the lowest interface trap density and negligible capacitive hysteresis. |
| Databáze: | OpenAIRE |
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