Metal–insulator transition in Si–MOS structures

Autor:	G. Brunthaler, V. M. Pudalov, A. Prinz, Gerrit E. W. Bauer
Rok vydání:	2000
Předmět:	Weak localization Materials science Condensed matter physics Hardware_INTEGRATEDCIRCUITS General Materials Science Hardware_PERFORMANCEANDRELIABILITY Electrical and Electronic Engineering Metal–insulator transition Condensed Matter Physics Hardware_LOGICDESIGN
Zdroj:	Superlattices and Microstructures. 27:301-310
ISSN:	0749-6036
Popis:	A survey is presented on recent investigations of the metal-to-insulator transition in two-dimensional systems with special emphasis on n-Si–MOS structures. Experimental facts are presented and the currently open questions on the nature of this transition are addressed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8f075066e9d3ad169ed8ea11ab37e978 https://doi.org/10.1006/spmi.2000.0831 Zobrazit plný text záznamu Full Text from ScienceDirect