On a Hypothesis on the Molecule Vacancies in PbTe

Autor: R. Assenov, M. Moldovanova
Rok vydání: 1996
Předmět:
Zdroj: Crystal Research and Technology. 31:625-628
ISSN: 1521-4079
0232-1300
DOI: 10.1002/crat.2170310516
Popis: The temperature dependence of the current carriers mobility in SnTe(I) and PbTe (I) synthesized in presence of SnI2 or PbI2 respectively was studied. An experimental formula was established, showing that current carriers scattering in SnTe(I) is due to vacancies at constant Hall coefficient. For PbTe (I) crystallized from tellurium solution by traveling heater method the mobility is high (between 2.104 and 4.104 cm2/Vs) and the Hall coefficient is constant within the interval 77 K–450 K. Only within 77 K–160 K interval the current carriers scattering is due to vacancies. A hypothesis is proposed based on the presence of molecular vacancies (VpbTe). These vacancies do not change electron gas concentration but do change the carriers mobility. Specimens with a negligibly low lead atoms vacancies Concentration were investigated. An empirical expression is established which shows that their mobility depends on molecular vacancies concentration and explains observed weak temperature influence upon carriers mobility. These results are obtained only from Hall coefficient and electric conductivity measurements within the 77 K–160 K temperature interval.
Databáze: OpenAIRE
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