Production of bulk NV centre arrays by shallow implantation and diamond CVD overgrowth
| Autor: | Vincent Jacques, Jan Meijer, Alix Gicquel, S. Pezzagna, Jean-François Roch, Nicole Raatz, Roger John, Piernicola Spinicelli, Margarita Lesik, Jocelyn Achard, Alexandre Tallaire |
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| Rok vydání: | 2016 |
| Předmět: |
Fabrication
Materials science Nanotechnology 02 engineering and technology Chemical vapor deposition engineering.material Quantum devices 01 natural sciences Negative charge 0103 physical sciences Materials Chemistry Electrical and Electronic Engineering 010306 general physics business.industry Atomic force microscopy Diamond Surfaces and Interfaces 021001 nanoscience & nanotechnology Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Ion implantation engineering Optoelectronics 0210 nano-technology business Layer (electronics) |
| Zdroj: | physica status solidi (a). 213:2594-2600 |
| ISSN: | 1862-6300 |
| DOI: | 10.1002/pssa.201600219 |
| Popis: | The nanometer-scale engineering of single nitrogen-vacancy (NV) centres in diamond can be obtained by low-energy (keV) nitrogen implantation with limited straggling. However, shallow NV centres (a few nanometres deep) generally have inferior overall properties than deeply implanted or deep native NV centres, due to the surface proximity. It has already been shown that the spin coherence time of shallow NVs is improved by overgrowth of a thin diamond layer. However the influence of the overgrowth on the survival, the optical properties and the charge state of the centres has not been studied in detail. In this article, we have overgrown three diamond samples (containing NV centres implanted at different depths) using different procedures. We show the successful overgrowth of a pattern of very shallow (2 nm) implanted NV centres using an optimised overgrowth process. Furthermore, the charge state of ensembles and single NV centres was found to be shifted from NV0 to NV− and stabilised in the negative charge state after overgrowth. The combination of low-energy high-resolution ion implantation and high-purity chemical vapour deposition (CVD) overgrowth procedures opens the way towards the fabrication of scalable and efficient quantum devices based on single defects in diamond. Left: implanted pattern of very shallow NV centres (depth ∼2 nm) using a pierced AFM tip. Right: same pattern after CVD overgrowth of a 4 μm-thick diamond layer. |
| Databáze: | OpenAIRE |
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