Ion Implantation Damage in CdS Crystals Using RBS/Channeling and Tem

Autor: N. R. Parikh, V.S. Raghunathan, D.A. Thompson, R. Burkova
Rok vydání: 1983
Předmět:
Zdroj: MRS Proceedings. 27
ISSN: 1946-4274
0272-9172
DOI: 10.1557/proc-27-323
Popis: Implantation damage in single crystal of CdS produced by 60 keV Bi+ and 45 keV Ne+ at 50 K and at 300 K has been studied. Measurements of Cd disorder and dechanneling behaviour have been made by means of RBS/channeling for He ions ranging in incident energy from 1.0 to 2.8 MeV either along or axial channeling directions. The amount of disorder measured were two orders of magnitude lower than the calculated Cd disorder. Damage when analysed along the axis is larger than when analysed along the axis.Xmim values for the implanted crystals decreases as the EO increases, when analysed along direction. TEM observations of Bi implanted samples show that the dislocation loops of b = 1/3 are produced. Attempts have been made to correlate the RBS/channeling results with the defect strictures observed in microscopy.
Databáze: OpenAIRE
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