Ultraviolet-emitting ZnO thick layer grown by thermal oxidation with gallium

Autor:	Atsushi Tackeuchi, Xiaohong Zhou, Takao Nukui, Hirokazu Tatsuoka, Sotaro Izumi, Qing Yang, Shu Hua Liang, Yu Saeki
Rok vydání:	2014
Předmět:	Thermal oxidation Photoluminescence Materials science Exciton General Engineering Optical property chemistry.chemical_element Substrate (electronics) medicine.disease_cause Photochemistry chemistry medicine General Materials Science Gallium Layer (electronics) Ultraviolet
Zdroj:	Science China Technological Sciences. 57:2500-2503
ISSN:	1869-1900 1674-7321
DOI:	10.1007/s11431-014-5714-y
Popis:	The ZnO layer with thickness of 1.6 μm in ZnO/ZnGa2O4 composite structure was grown by the thermal oxidation of ZnS substrate with gallium. The optical property of the ZnO thick layer was investigated by time-resolved photoluminescence. A single UV emission around 375 nm with short lifetime was observed at room temperature while the visible emission was absolutely quenched. The UV emission band was composed of the neutral donor bound exciton (D0X) and donor-acceptor pair (DAP) emission peaks with large full-width at half-maximums (FWHMs) at 3.367 and 3.318 eV, respectively, at 10 K. However, the intensity of the D0X emission was stronger than that of the DAP emission at measuring temperatures of 10–300 K.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8efaa14bf489b805b08a0f907ed24435 https://doi.org/10.1007/s11431-014-5714-y Zobrazit plný text záznamu Full text from SpringerLink