Etch characteristics of HfO2 films on Si substrates

Autor:	P.Y. Park, K. P. Lee, Byoung-Seong Jeong, V. Shishodia, David P. Norton, K.H. Baik, Stephen J. Pearton, S. Norasetthekul, J.H. Shin
Rok vydání:	2002
Předmět:	Range (particle radiation) Plasma etching Materials science Etching rate Analytical chemistry General Physics and Astronomy Surfaces and Interfaces General Chemistry Plasma Photoresist Condensed Matter Physics Surfaces Coatings and Films Etching (microfabrication) Surface structure Thin film
Zdroj:	Applied Surface Science. 187:75-81
ISSN:	0169-4332
DOI:	10.1016/s0169-4332(01)00792-9
Popis:	The etch rates and mechanisms for HfO2 thin films in Cl2-, SF6- or CH4/H2-based plasmas were measured as a function of source power, r.f. chuck power and discharge composition. Both Cl2- and SF6-based plasmas produced some degree of chemical enhancement in the etch mechanism. Selectivities between 0.2 and 5 were obtained for Si over HfO2 in these two plasma chemistries. High fidelity pattern transfer was achieved for photoresist-masked HfO2/Si structures etched with Cl2/Ar over a broad range of pressures or with SF6/Ar at low pressures. The surface morphologies of both HfO2 and Si were smooth over a wide range of etching conditions.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8eefe8283b3c5fdb3a0b26def869765f https://doi.org/10.1016/s0169-4332(01)00792-9 Zobrazit plný text záznamu Full Text from ScienceDirect