Low-temperature crystallization of thin nickel films under the action of atomic hydrogen

Autor: E. L. Zhavzharov, G. A. Byalik, V. M. Matyushin
Rok vydání: 2007
Předmět:
Zdroj: Technical Physics Letters. 33:571-574
ISSN: 1090-6533
1063-7850
DOI: 10.1134/s1063785007070097
Popis: The influence of atomic hydrogen on the electrical properties and structure of thin nickel films obtained by thermal deposition in vacuum on dielectric substrates has been studied. The subsequent treatment of deposited films at 300–310 K in atomic hydrogen at a pressure of ∼20 Pa and a density of ∼1019 m−3 leads to the modification of their structure and electrical properties. A mechanism explaining the observed effect of atomic hydrogen on thin metal films is proposed.
Databáze: OpenAIRE