Low-temperature crystallization of thin nickel films under the action of atomic hydrogen
Autor: | E. L. Zhavzharov, G. A. Byalik, V. M. Matyushin |
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Rok vydání: | 2007 |
Předmět: | |
Zdroj: | Technical Physics Letters. 33:571-574 |
ISSN: | 1090-6533 1063-7850 |
DOI: | 10.1134/s1063785007070097 |
Popis: | The influence of atomic hydrogen on the electrical properties and structure of thin nickel films obtained by thermal deposition in vacuum on dielectric substrates has been studied. The subsequent treatment of deposited films at 300–310 K in atomic hydrogen at a pressure of ∼20 Pa and a density of ∼1019 m−3 leads to the modification of their structure and electrical properties. A mechanism explaining the observed effect of atomic hydrogen on thin metal films is proposed. |
Databáze: | OpenAIRE |
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