On the mechanism of current passage in metal/p-CuInSe2 structures
Autor: | V. B. Orletskii, O. N. Sydor, V. V. Khomyak, P. N. Gorlei, V. V. Netyaga, Zakhar D. Kovalyuk |
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Rok vydání: | 2004 |
Předmět: | |
Zdroj: | Technical Physics. 49:658-659 |
ISSN: | 1090-6525 1063-7842 |
DOI: | 10.1134/1.1758348 |
Popis: | Mechanisms of current passage and the temperature dependence of the current-voltage characteristics in Schottky diodes produced by vacuum evaporation of indium on p-CuInSe2 single crystals are discussed. High values of the open-circuit voltage and short-circuit current in these surface-barrier diodes, as well as a high reproducibility of these parameters, suggest that such an inexpensive and rather simple technology is promising for efficient conversion of solar radiation. |
Databáze: | OpenAIRE |
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