On the mechanism of current passage in metal/p-CuInSe2 structures

Autor: V. B. Orletskii, O. N. Sydor, V. V. Khomyak, P. N. Gorlei, V. V. Netyaga, Zakhar D. Kovalyuk
Rok vydání: 2004
Předmět:
Zdroj: Technical Physics. 49:658-659
ISSN: 1090-6525
1063-7842
DOI: 10.1134/1.1758348
Popis: Mechanisms of current passage and the temperature dependence of the current-voltage characteristics in Schottky diodes produced by vacuum evaporation of indium on p-CuInSe2 single crystals are discussed. High values of the open-circuit voltage and short-circuit current in these surface-barrier diodes, as well as a high reproducibility of these parameters, suggest that such an inexpensive and rather simple technology is promising for efficient conversion of solar radiation.
Databáze: OpenAIRE