| Autor: |
Yu-Shyan Lin, Heng-Wei Wang |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
Science of Advanced Materials. 14:1419-1422 |
| ISSN: |
1947-2935 |
| Popis: |
An AlGaN/AlN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMT) with an Al2O3 insulator is studied. The post-deposition annealing (PDA) of Al2O3 is conducted. The effects of PDA in an N2 atmosphere on the performance of the MOS-HEMTs are studied. Experimental results demonstrate that the trap density in the Al2O3 MOS diode is significantly decreased by annealing. Adding annealed Al2O3 as a surface passivation and a gate oxide layer on HEMTs reduces gate leakage currents, increases the two-terminal reverse breakdown voltage, and improves the high-frequency performance of the HEMTs. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
