Ni2Si/4H-SiC Schottky Photodiodes for Ultraviolet Light Detection
| Autor: | Fabrizio Roccaforte, Paolo Badalà, B. Carbone, Roberto Modica, Corrado Bongiorno, Antonella Sciuto, Salvatore Marchese, Salvatore Coffa, Denise Calì, Alfio Russo, Massimo Mazzillo, Francesco Patane |
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| Rok vydání: | 2016 |
| Předmět: |
Fabrication
Materials science business.industry Mechanical Engineering Schottky diode Condensed Matter Physics medicine.disease_cause Photodiode law.invention chemistry.chemical_compound Optics chemistry Mechanics of Materials law Silicon carbide Ultraviolet light medicine Radiation monitoring Optoelectronics General Materials Science business Layer (electronics) Ultraviolet |
| Zdroj: | Materials Science Forum. 858:1015-1018 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.858.1015 |
| Popis: | Ultraviolet (UV) monitoring is of great interest in the healthcare field to prevent excessive UV exposure risks. In the last years silicon carbide (SiC) has emerged as a suitable material for the fabrication of UV detectors. In this paper we propose a 4H-SiC Schottky photodiode with a continuous very thin Ni2Si layer operating at 0V, properly designed for UV radiation monitoring. |
| Databáze: | OpenAIRE |
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