Evaluation of poly(allyl methacrylate)-co-(hydroxyethyl methacrylate) as negative electron-beam resist
| Autor: | Zoilo C. H. Tan, Sharon S. Georgia |
|---|---|
| Rok vydání: | 1983 |
| Předmět: |
chemistry.chemical_classification
Materials science Polymers and Plastics Dispersity General Chemistry Polymer (Hydroxyethyl)methacrylate Photoresist Isotropic etching chemistry.chemical_compound Resist chemistry Chemical engineering Polymer chemistry Materials Chemistry Electron beam processing Dry etching |
| Zdroj: | Polymer Engineering and Science. 23:963-967 |
| ISSN: | 1548-2634 0032-3888 |
| DOI: | 10.1002/pen.760231709 |
| Popis: | Poly(allyl methacrylate)-co-(hydroxyethyl methacrylate) has been evaluated as a high-sensitivity, high-resolution, high temperature-resistant negative electron resist. The effects of molecular weight and polydispersity of the copolymer on its lithographic performance as an E-beam resist were studied. The sensitivity of the copolymer is nearly constant in the weight-average-molecular-weight range of 50,000 to 75,000, and it gradually decreases with a decrease in molecular weight. As expected for a negative resist, the resist contrast increases as the polydispersity is decreased. The sensitivity curve shape of the polymer was independent of the prebake temperature, which varied from 70 to 110°C, and of the various developers used. The exposed coating requires vacuum curing for image optimization. Resolution of 0.5 μm line/space pairs was obtained from a 0.6 μm thick resist by exposing the resist to 10 keV electrons with either a raster-scan-type or vector-scan-type electron-beam exposure machine. After postbaking at 170°C, the resist had good resistance to both chemical etching and dry etching. The plasma-etch resistance was about twice that of PMMA. |
| Databáze: | OpenAIRE |
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