Integrated temperature sensor in Er-doped silicon
| Autor: | F. Namavar, A.K Kewell, Graham T. Reed |
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| Rok vydání: | 1998 |
| Předmět: |
Fabrication
Materials science Silicon Physics::Instrumentation and Detectors business.industry Hybrid silicon laser Doping Metals and Alloys Physics::Optics chemistry.chemical_element Nanotechnology Hardware_PERFORMANCEANDRELIABILITY Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Surface micromachining chemistry Measuring principle Hardware_INTEGRATEDCIRCUITS Microelectronics Optoelectronics Electrical and Electronic Engineering business Luminescence Instrumentation |
| Zdroj: | Sensors and Actuators A: Physical. 65:160-164 |
| ISSN: | 0924-4247 |
| DOI: | 10.1016/s0924-4247(97)01699-3 |
| Popis: | A temperature sensor is described which is compatible with silicon microelectronics and operates over the range 40–150 K. The measurement principle is based on the analysis of the time decay of the luminescence emitted by erbium-doped silicon. Experimental results are given as proof of principle. The device could be realized using techniques from standard silicon electronics fabrication processes. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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