Application of rapid thermal process to solution-processed Ti-silicate films for enhancing permittivity without losing amorphous nature

Autor:	Tae Woong Kim, Jun Hyung Lim, Ju Yun Choi, Hyoungsub Kim, Seung Muk Lee, Soon Yong Hwang, Joong Keun Park, Jinho Joo, Soo Min Hwang, Young Dong Kim, Tae Jung Kim
Rok vydání:	2013
Předmět:	Permittivity Materials science Analytical chemistry General Physics and Astronomy Dielectric Silicate Amorphous solid chemistry.chemical_compound chemistry X-ray photoelectron spectroscopy General Materials Science Solution process Nanoscopic scale Layer (electronics)
Zdroj:	Current Applied Physics. 13:S41-S44
ISSN:	1567-1739
DOI:	10.1016/j.cap.2013.01.003
Popis:	Nanoscale thick Ti-silicate films were synthesized by the solution process on Si(100) substrates, followed by post annealing of rapid thermal process (RTP). The film retained its amorphous structure with a remarkably enhanced permittivity ( k ) value: the k values of the Ti-silicate layer and overall film were increased from 8.6 to 16.2 and from 4.9 to 9.7, respectively, by performing RTP at 700 °C for 1 min. The k value of the interfacial layer between the Ti-silicate and Si was almost unchanged (∼7) after RTP. The FT-IR and XPS analyses indicated that the films had Ti–O–Si bonding relating to the segregated phases of Ti- and Si-rich silicates before RTP. The segregated nature of the sample before RTP was probably due to the different hydrolysis rates of the Si and Ti precursors and/or nanoscale thickness. The degree of segregation further increased after RTP, resulting in a significant improvement of the k value of the Ti-silicate.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8ecbf1d7ebb711bd03815509322f166e https://doi.org/10.1016/j.cap.2013.01.003 Zobrazit plný text záznamu Full Text from ScienceDirect