Ultrathin Bi2O2S nanosheet near-infrared photodetectors

Autor:	Jason D. Orlando, Yongan Tang, Fei Yan, Basant Chitara, Tej B. Limbu
Rok vydání:	2020
Předmět:	Materials science business.industry Near-infrared spectroscopy Photodetector chemistry.chemical_element Photodetection Bismuth symbols.namesake chemistry symbols Optoelectronics General Materials Science Laser illumination Quantum efficiency van der Waals force business Nanosheet
Zdroj:	Nanoscale. 12:16285-16291
ISSN:	2040-3372 2040-3364
DOI:	10.1039/d0nr02991b
Popis:	Recently, a zipper two-dimensional (2D) material Bi2O2Se belonging to the layered bismuth oxychalcogenide (Bi2O2X: X = S, Se, Te) family, has emerged as an alternate candidate to van der Waals 2D materials for high-performance electronic and optoelectronic applications. This hints towards exploring the other members of the Bi2O2X family for their true potential and bismuth oxysulfide (Bi2O2S) could be the next member for such applications. Here, we demonstrate for the first time, the scalable room-temperature chemical synthesis and near-infrared (NIR) photodetection of ultrathin Bi2O2S nanosheets. The thickness of the freestanding nanosheets was around 2-3 nm with a lateral dimension of ∼80-100 nm. A solution-processed NIR photodetector was fabricated from ultrathin Bi2O2S nanosheets. The photodetector showed high performance, under 785 nm laser illumination, with a photoresponsivity of 4 A W-1, an external quantum efficiency of 630%, and a normalized photocurrent-to-dark-current ratio of 1.3 × 1010 per watt with a fast response time of 100 ms. Taken together, the findings suggest that Bi2O2S nanosheets could be a promising alternative 2D material for next-generation large-area flexible electronic and optoelectronic devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8ec321d11e8015431faae88144f7c908 https://doi.org/10.1039/d0nr02991b Zobrazit plný text záznamu