The microstructure and properties of a buried AIN layer produced by nitrogen implantation into pure aluminum
| Autor: | J.R Tesmer, X. D. Wu, H.L Lu, M.J Borden, W.F Sommer |
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| Rok vydání: | 1996 |
| Předmět: |
inorganic chemicals
Materials science Aluminium nitride Metals and Alloys Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Nitride Microstructure complex mixtures Nitrogen Surfaces Coatings and Films Electronic Optical and Magnetic Materials Crystallography chemistry.chemical_compound Ion implantation chemistry Electron diffraction Electrical resistivity and conductivity X-ray crystallography Materials Chemistry |
| Zdroj: | Thin Solid Films. 289:17-21 |
| ISSN: | 0040-6090 |
| Popis: | A buried aluminum nitride (AIN) layer was formed by nitrogen ion implantation into pure aluminum with doses of 10, 18 and 28 × 1017 N+ cm−2 at 200 keV. In order to analyze the profile of the implanted nitrogen in aluminum, 3.5 MeV 4He+ backscattering was used, in preference to 2.0 Mev 4He+ backscattering. A rectangular-like profile of the implanted nitrogen was obtained from the Rutherford backscattering spectra after the dose of 10 × 1017 N+ cm−2. The nitrogen to aluminum ratio at the rectangular-like profile is about 0.9–1.0. The results of X-ray diffraction and transmission electron diffraction indicated that aluminum nitride structure is essentially the hexagonal crystal. Aluminum nitride with f.c.c. structure also appeared on nitrogen implantantion into aluminum. This is a transient structure. The resistivity of AIN formed by nitrogen implantation into aluminum is about (1.4−2.0) × 1012 Ω cm. |
| Databáze: | OpenAIRE |
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