Beveled Fluoride Plasma Treatment for Vertical $\beta$ -Ga2O3Schottky Barrier Diode With High Reverse Blocking Voltage and Low Turn-On Voltage
| Autor: | Hong Zhou, Jincheng Zhang, Yachao Zhang, Kui Dang, Xuanwu Kang, Chunyong Zhao, Zhuangzhuang Hu, Yuanjie Lv, Jing Ning, Yue Hao, Zhaoqing Feng, Qian Feng, Xusheng Tian |
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| Rok vydání: | 2020 |
| Předmět: | |
| Zdroj: | IEEE Electron Device Letters. 41:441-444 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | In this letter, we report on demonstrating a high performance vertical $\beta $ -Ga2O3 Schottky barrier diode (SBD) based on a self-aligned beveled fluorine plasma treatment (BFPT) edge termination structure. Owing to the strong electronegativity of fluorine ions, the fixed negative charges introduced by F ions during self-aligned BFPT process alleviate the electric field crowding, reduce the reverse leakage current and improve the breakdown voltage up to 1 050V even with a low differential on resistance of 2.5 $\text{m}\Omega \cdot $ cm2, combining with a high $I_{\text {on}}/I_{\text {off}}$ of 109, a Schottky barrier height of 1.03 eV and a low ideality factor of 1.07-1.11.Without implantation and post annealing, the self-aligned BFPT can serve as a simple, effective and viable edge termination technique to fabricate high performance $\beta $ -Ga2O3 rectifiers. |
| Databáze: | OpenAIRE |
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