Modification of the thermal relaxation kinetics of the photoinduced (at T = 425 K) metastable dark conductivity of a-Si:H films by weak illumination during the initial stage of relaxation
| Autor: | N. N. Ormont, I. A. Kurova |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Condensed matter physics Chemistry Hydrogen bond Kinetics Analytical chemistry Dark conductivity 02 engineering and technology Conductivity 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Amorphous solid Condensed Matter::Materials Science Metastability 0103 physical sciences Relaxation (physics) Thermal relaxation 0210 nano-technology |
| Zdroj: | Semiconductors. 51:417-419 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782617040108 |
| Popis: | The effect of weak illumination during the initial stage of relaxation of the dark metastable conductivity of an undoped a-Si:H film, photoinduced at T = 425 K, on the rate of its subsequent thermal relaxation is studied. It is found that the kinetics of relaxation upon illumination or in the absence of illumination is described by stretched exponents with the parameters τ0 and β, which are smaller in the case of illumination. It is shown that a decrease in these parameters increases the rate of thermal relaxation of the dark conductivity of the film. Because the temperature and the illumination intensities at which the study is carried out are low, the changes in the relaxation rate of the metastable conductivity are unlikely associated with significant restructuring of the amorphous network. This may be due to changes in the system of hydrogen bonds, which can result, in particular, from the generation and relaxation of slow photoinduced defects under the influence of illumination. |
| Databáze: | OpenAIRE |
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