Si, SiGe Nanowire Devices by Top–Down Technology and Their Applications
| Autor: | K.D. Buddharaju, N. Balasubramanian, Sanjeev Kumar Manhas, Ajay Agarwal, Dim-Lee Kwong, S.C. Rustagi, Navab Singh, Guo-Qiang Lo |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Hardware_MEMORYSTRUCTURES
Computer science Transistor Nanowire Nanotechnology Integrated circuit Electronic Optical and Magnetic Materials law.invention Silicon-germanium Non-volatile memory chemistry.chemical_compound CMOS chemistry law Logic gate MOSFET Hardware_INTEGRATEDCIRCUITS Electrical and Electronic Engineering |
| Zdroj: | IEEE Transactions on Electron Devices. 55:3107-3118 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/ted.2008.2005154 |
| Popis: | Nanowire (NW) devices, particularly the gate-all-around (GAA) CMOS architecture, have emerged as the front-runner for pushing CMOS scaling beyond the roadmap. These devices offer unique advantages over their planar counterparts which make them feasible as an option for 22 -nm and beyond technology nodes. This paper reviews the current technology status for realizing the GAA NW device structures and their applications in logic circuit and nonvolatile memories. We also take a glimpse into applications of NWs in the ldquomore-than-Moorerdquo regime and briefly discuss the application of NWs as biochemical sensors. Finally, we summarize the status and outline the challenges and opportunities of the NW technology. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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