MOCVD-grown InGaAs/GaAs/AlGaAs laser structures with a broad-area contact
| Autor: | A. A. Padalitsa, A. V. Lutetskii, I D Zalevskii, A. D. Bondarev, I. S. Tarasov, P.V. Bulaev, D. N. Nikolaev, D. B. Nikitin, Nikita A. Pikhtin, V. A. Kapitonov, Aleksandr A Marmalyuk |
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| Rok vydání: | 2002 |
| Předmět: |
Materials science
business.industry Physics::Optics Heterojunction Optical power Chemical vapor deposition Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Laser Waveguide (optics) Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention law Optoelectronics Metalorganic vapour phase epitaxy business Lasing threshold Diode |
| Zdroj: | Semiconductors. 36:1065-1069 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/1.1507292 |
| Popis: | A metal-organic chemical vapor deposition (MOCVD) technique is developed for a diode laser heterostructure in a system of InGaAs/GaAs/AlGaAs solid solutions; the optimal sizes and the doping profile of the structure are determined to minimize the internal optical losses. Mesa-strip diode lasers with a threshold density of current Jth=150–200 A/cm2, internal optical loss factor αi=1.6–1.9 cm−1, and an internal quantum yield ηi=85–95% were fabricated. In the continuous lasing mode of a diode laser with a 100-µm-wide aperture and a wavelength of 0.98 µm, the optical power output was as high as 6.5 W and was limited by the catastrophic optical degradation of mirrors. The radiation divergence in the plane normal to the p-n junction amounts to θ⊥. The use of wide-gap waveguide layers, which deepens the potential electron well in the active region, is shown to reduce the temperature sensitivity of the InGaAs/GaAs/AlGaAs laser heterostructures in the temperature range from 0 to 70°C. |
| Databáze: | OpenAIRE |
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