Chemical vapor transport and characterization of MnBi2Se4
Autor: | Sven Partzsch, Christian Nowka, Anja U. B. Wolter, Bernd Büchner, Jorge Enrique Hamann Borrero, Laura T. Corredor Bohorquez, Silke Hampel, Christian Hess, Frank Steckel, Christoph Wuttke, Markus Gellesch |
---|---|
Rok vydání: | 2017 |
Předmět: |
Materials science
business.industry Metal chalcogenides Analytical chemistry Mineralogy 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Wide field 0104 chemical sciences Characterization (materials science) Inorganic Chemistry Semiconductor Electrical transport Mass transfer Materials Chemistry Antiferromagnetism 0210 nano-technology business |
Zdroj: | Journal of Crystal Growth. 459:81-86 |
ISSN: | 0022-0248 |
DOI: | 10.1016/j.jcrysgro.2016.11.090 |
Popis: | Layered metal chalcogenides such as MnBi 2 Se 4 are interesting candidates for a wide field of applications such as for thermo- and photoelectrics. High-quality single crystals are necessary in order to investigate their properties which can be prepared by chemical vapor transport (CVT). The CVT of MnBi 2 Se 4 has not been investigated until this point and is subject of the presented paper. We obtained needle-like MnBi 2 Se 4 single crystals with a length up to 15 mm. The magnetic characterization has shown an antiferromagnetic transition around 14 K. Additionally, electrical transport described MnBi 2 Se 4 as a narrow band-gap semiconductor ( E Gap =0.15 eV). Thermodynamic data for MnBi 2 Se 4 at room temperature were determined to H ° = − 305 KJ · mol − 1 , S =321 J K −1 ·mol −1 and C p = 167.568 + 25.979 · 10 − 3 · T J · K − 1 · mol − 1 , respectively. Our results on CVT-grown single crystals confirm reported data from literature and complete the data set for MnBi 2 Se 4 . |
Databáze: | OpenAIRE |
Externí odkaz: |