Changes in the silicon microhardness induced by a low-intensity electron beam
| Autor: | A. A. Dmitrievskii, N. Yu. Suchkova, Yu. I. Golovin, M. Yu. Tolotaev |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
Reflection high-energy electron diffraction Silicon business.industry Oxide chemistry.chemical_element Crystallographic defect Surfaces Coatings and Films chemistry.chemical_compound Optics chemistry Etching (microfabrication) Electron beam processing sense organs Surface layer Thin film Composite material business |
| Zdroj: | Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 1:204-206 |
| ISSN: | 1819-7094 1027-4510 |
| DOI: | 10.1134/s1027451007020176 |
| Popis: | It is shown that nonequilibrium point defects are of primary importance in the changes in the silicon microhardness induced by a low-intensity (I ∼ 105 cm−2 s−1) electron beam. It is found that the necessary condition for softening under low-intensity electron irradiation is the presence of an oxide layer on the surface. The thickness of the surface layer in which anomalous changes in the microhardness are observed is determined by the layer-by-layer etching technique. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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