Non-volatile memories using SrBi2Ta2O9 ferroelectrics

Autor:	Koji Arita, Sufi Zafar, Yasuhiro Shimada, Bruce E. White, Bo Jiang, D. J. Taylor, M. Azuma, Robert E. Jones, H. Hirano, J. Nakane, Yasuhiro Uemoto, D. Price, T. Nakakum, Tatsuo Otsuki, Peter Zurcher, S.J. Gillespie, Bradley M. Melnick, Yuji Judai, Eiji Fujii, G. Kano, S. Hayashi, Nobuyuki Moriwaki, Tatsumi Sumi, P.Y. Chu
Rok vydání:	1997
Předmět:	Bit cell Hardware_MEMORYSTRUCTURES Materials science business.industry Single level Condensed Matter Physics Ferroelectricity Ferroelectric capacitor Electronic Optical and Magnetic Materials law.invention Non-volatile memory Capacitor Hardware_GENERAL Control and Systems Engineering law Hardware_INTEGRATEDCIRCUITS Materials Chemistry Ceramics and Composites Optoelectronics Electrical and Electronic Engineering business Perovskite (structure)
Zdroj:	Integrated Ferroelectrics. 17:21-30
ISSN:	1607-8489 1058-4587
Popis:	Ferroelectric non-volatile memories (FENVM) are fabricated using spin-coat and fire deposition of the SrBi2Ta2O9 layered perovskite ferroelectric. Test memories using a 2 transistor-2 capacitor bit cell, top contacts to capacitors and single level metal were fabricated. We report here on the integration and electrical characteristics of fully functional 1 Kbit test memories.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8e937c2764345eae855a0652eee4e9e4 https://doi.org/10.1080/10584589708012978 Zobrazit plný text záznamu