Superb Endurance and Appropriate Vth of PCM Pillar Cell using Buffer Layer for 3D Cross-Point Memory
| Autor: | Matthew J. BrightSky, Huai-Yu Cheng, N. Gang, Cheng-Wei Cheng, Erh-Kun Lai, C. W. Yeh, Asit Kumar Ray, Robert L. Bruce, H.L. Lung, Kuo I-Ting, L.M. Gignac, Fabio Carta, C. H. Yang, Wanki Kim, John M. Papalia, Wei-Chih Chien |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science business.industry 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Memory array Buffer (optical fiber) Threshold voltage Phase-change memory Reliability study 0103 physical sciences Electrode Optoelectronics Pillar Cell Cross point 0210 nano-technology business |
| Zdroj: | 2019 IEEE 11th International Memory Workshop (IMW). |
| DOI: | 10.1109/imw.2019.8739477 |
| Popis: | A reliability study for phase change memory (PCM) pillar cell is performed. We found that without a buffer layer, the PCM pillar cell shows earlier endurance failure than its mushroom counterpart, and the underlying failure mechanism is attributed to element segregation. A buffer layer between PCM and top electrode is found to substantially improve the endurance characteristics of the PCM pillar cell to greater than 1E10 program cycles. In addition, the buffer layer also provides the benefit of increased PCM threshold voltage (Vth), which can enlarge the read window margin for the OTS+PCM 3D Cross-Point Memory array. |
| Databáze: | OpenAIRE |
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