CMOS integrated digital RF MEMS capacitors

Autor:	Dana Dereus, S.P. Natarajan, Shawn J. Cunningham, Arthur S. Morris
Rok vydání:	2011
Předmět:	Microelectromechanical systems Engineering business.industry Mems capacitors Electrical engineering Hardware_PERFORMANCEANDRELIABILITY law.invention Capacitor CMOS Hardware_GENERAL law Q factor Hardware_INTEGRATEDCIRCUITS Wireless business Cmos process Voltage
Zdroj:	2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.
Popis:	A zero-level packaged, digitally switched, RF MEMS capacitor array has been developed within a mass production capable HV RF CMOS process. These RF MEMS capacitors are grouped in flip-chip cells that exhibit a high quality factor of 87 at 2 GHz, a tuning ratio of almost 10 to 1, a self resonant frequency greater than 5 GHz, and operate using a 3.3V supply voltage. These arrays are ideally suited for front-end tuning applications in portable wireless devices such as cell phones.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8e786d75adf96a1cf4d2efa8649667c4 https://doi.org/10.1109/sirf.2011.5719327 Zobrazit plný text záznamu