Electrically Active Traps at the 4H-SiC/SiO2 Interface Responsible for the Limitation of the Channel Mobility

Autor:	Max J. Schulz, Michael Bassler, Valeri Afanas'ev, Gerhard Pensl
Rok vydání:	2000
Předmět:	Materials science Admittance spectroscopy Mechanics of Materials business.industry Mechanical Engineering Interface (computing) Optoelectronics General Materials Science Condensed Matter Physics business Communication channel
Zdroj:	Materials Science Forum. :1065-1068
ISSN:	1662-9752
DOI:	10.4028/www.scientific.net/msf.338-342.1065
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8e774c348f6daecea5138025bfd352db https://doi.org/10.4028/www.scientific.net/msf.338-342.1065 Zobrazit plný text záznamu