| Popis: |
Bipolar junction transistors (BJTs) are often used in spacecraft due to their excellent working characteristics. However, the complex space radiation environment induced primary knock-on atom (PKA) in BJTs through collisions, resulting in hard-to-recover displacement damage and affecting the electrical performance of electronic components. In this paper, the properties of PKAs induced by typical space-heavy ions (C, N, O, Fe) in BJTs are investigated using Monte Carlo simulations. The simulated results show that the energy spectrum of ion-induced PKAs is primarily concentrated in the low energy range (17-100 eV) and displays similar features across all tested ions. The PKAs induced by the collision of energetic ions have a large forward scattering angle, which is mainly around 88°. Moreover, PKA distribution within the transistor as a function of depth displays a peak characteristics, and the peak position is linearly proportional to the incident energy at a certain energy range. These simulation outcomes serve as crucial theoretical support for long-term semiconductor material defect evolution and ground testing of semiconductor devices. |
