Ultrafast carrier dynamics in InGaAsP grown by He-plasma-assisted epitaxy
| Autor: | B.J. Robinson, Peter W. E. Smith, D.A. Thompson, H. Pinkney, Li Qian, M.A. Matin |
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| Rok vydání: | 2000 |
| Předmět: |
Materials science
business.industry Doping Plasma Rate equation Epitaxy Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Wavelength Optics Optoelectronics Charge carrier Electrical and Electronic Engineering Physical and Theoretical Chemistry business Ultrashort pulse Molecular beam epitaxy |
| Zdroj: | Optics Communications. 185:487-492 |
| ISSN: | 0030-4018 |
| Popis: | We perform dual-wavelength pump‐probe measurements on InGaAsP grown by He-plasma-assisted molecular beam epitaxy with Be doping concentrations ranging from 0 to 6 10 18 cm ˇ3 . The material response times obtained vary from 1 to>70 ps depending on doping concentration, pump pulse energy, and probe wavelength. A two-trap-level rate equation model is presented to explain the various response times observed, and trap densities of 2:5 10 17 and 12 10 17 cm ˇ3 , electron-capture cross-sections of 12 10 ˇ15 and 2:8 10 ˇ15 cm 2 , and hole-capture cross-sections of 1:4 10 ˇ16 and 1:8 10 ˇ15 cm 2 are derived by fitting the experimental data. Dual-pulse pump‐probe measurements indicate that a fast repeated switching on a10 ps timescale using Be-doped materials can be achieved despite the slow hole-capture rate associated with one of the trap levels. ” 2000 Published by Elsevier Science B.V. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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