Influence of RTP Process on the Carrier Lifetime in Bare Cz Silicon Wafers
| Autor: | Kouhlane, Y., Bouhafs, D., Si-Kaddour, R., Boufnik, R., Khelifati, N., Boucheham, A. |
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| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: | |
| DOI: | 10.4229/eupvsec20152015-2av.1.41 |
| Popis: | 31st European Photovoltaic Solar Energy Conference and Exhibition; 626-628 Solar cells made from Boron doped Czochralski grown silicon ingots (Cz-Si) have the advantage of a higher efficiency potential. However, the lifetime of minority charge carrier main indicator of crystalline silicon wafers quality, is limited by degradation under light illumination (LID), caused by metastable defects. It is possible to increase the stable lifetime after LID degradation permanently, using a rapid thermal process (RTP). In this perspective, we studied the effect of RTP cycle with different peak temperatures (620, 675, 730, 785 and 830 °C) on monocrystalline Cz-Si p-type wafers. The treated wafers have undergone a light degradation step with different light exposure time. Minority charge carrier lifetime’s (n) measurement was performed by the quasi-steady state (QSSPC) method. A reduction of LID phenomena degradation was observed. This lead to an improvement of the stable effective lifetime enhanced by RTP process. Also, analysis of Shockley–Read–Hall (SRH) lifetime shows the presence of defects with a deep level energy. Therefore, the impact of boron-oxygen complex (B-O) on n degradation was confirmed by the calculated of effective defect concentration (Nt) and the defect annihilation rate (Rann). Finally, the results of recovery with a stabilized lifetime by a RTP process are very promising to ameliorate the electrical quality of the Cz-Si wafer which contributes to reach higher solar cell efficiency whti a long life time PV modules performances. |
| Databáze: | OpenAIRE |
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