32nm node BEOL integration with an extreme low-k porous SiOCH dielectric k=2.3
| Autor: | D. Galpin, Alexis Farcy, E. Richard, P. Brun, G. Imbert, Jonathan Pradelles, Vincent Jousseaume, M. Assous, B. Icard, Daniel Barbier, C. Jayet, C. Monget, Sonarith Chhun, Michel Haond, Sylvain Maitrejean, Vincent Arnal, J. Guillan, S. Manakli, K. Hamioud, Aziz Zenasni |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
business.industry Copper interconnect Low-k dielectric Dielectric Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Chemical-mechanical planarization Trench Forensic engineering Optoelectronics Node (circuits) Metallizing Electrical and Electronic Engineering Porosity business |
| Zdroj: | Microelectronic Engineering. 87:316-320 |
| ISSN: | 0167-9317 |
| Popis: | A 32nm node BEOL integration scheme is presented with 100nm metal pitch at local and intermediate levels and 50nm via size through a M1-Via1-M2 via chain demonstrator. To meet the 32nm RC performance specifications, extreme low-k (ELK) porous SiOCH k=2.3 is introduced at line and via level using a Trench First Hard Mask dual damascene architecture. Parametrical results show functional via chains and good line resistance. Integration validation of ELK porous SiOCH k=2.3 is investigated using a multi-level metallization test vehicle in a 45nm mature generation. |
| Databáze: | OpenAIRE |
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