Preservation of InP substrates in vapor phase epitaxy: The effect of excess PH3
| Autor: | A.K. Chin, F. Ermanis, M.A. DiGiuseppe, L.J. Peticolas |
|---|---|
| Rok vydání: | 1985 |
| Předmět: |
chemistry.chemical_classification
business.industry Thermal decomposition Crystal growth Partial pressure Atmospheric temperature range Condensed Matter Physics Epitaxy law.invention Inorganic Chemistry Optics chemistry Chemical engineering Optical microscope law Materials Chemistry Thin film business Inorganic compound |
| Zdroj: | Journal of Crystal Growth. 73:311-315 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/0022-0248(85)90307-0 |
| Popis: | During vapor phase epitaxy, PH3 is generally used to preserve InP substrates. While PH3 is effective in reducing thermal decomposition, we find that excessive PH3 can produce morphological imperfections on the substrate surface. It is shown that in the temperature range of 675 to 700°C there is an optimum PH3 pressure under which the InP substrate surface morphology remains unchanged. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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