Reaction Kinetics of Thermally Stable Contact Metallization on 6H-SiC

Autor:	Robert S. Okojie, David J. Spry, Yuan L. Chen, Dorothy Lukco, Carl Salupo
Rok vydání:	2000
Předmět:	Auger electron spectroscopy Platinum silicide chemistry.chemical_compound Materials science chemistry Scanning electron microscope Transmission electron microscopy Contact resistance Analytical chemistry chemistry.chemical_element Platinum High-resolution transmission electron microscopy Overlayer
Zdroj:	MRS Proceedings. 640
ISSN:	1946-4274 0272-9172
Popis:	The growth kinetics of thermally stable Ti(100nm)/TaSi2 (200nm)/Pt (300nm) metallization on 6H-SiC was studied after heat treatment in air up to 700°C. Scanning electron microscopy (SEM) of the contact surface morphology reveals a two-dimensional network of features that is attributed to non-uniform oxide growth associated with the multigrain structure of the platinum overlayer. Auger electron spectroscopy (AES) and high-resolution transmission electron microscopy (HRTEM) identified three important reaction zones after initial 30-minute anneal at 600°C in nitrogen. One is the formation of a platinum silicide overlayer resulting from TaSi2 decomposition. The second is titanium silicide formation adjacent to the decomposed TaSi2. The third is pseudo-epitaxial Ti5Si3 at the SiC interface. Specific contact resistance values ranging from 10−4–10−6 Ω-cm2, remained stable after 200 hours at 600°C in air. Activation energies of 1.03eV for platinum silicide oxidation and 1.96eV for Ti5Si3 are obtained from Arrhenius plots.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8e5d54c3a10f98876f873b1049ba6d0a https://doi.org/10.1557/proc-640-h7.5 Zobrazit plný text záznamu Full text from SpringerLink