Development of high-current 4H-SiC ACCUFET
| Autor: | Mrinal K. Das, Ranbir Singh, Doyle Craig Capell, John W. Palmour, Lori A. Lipkin |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Materials science
Annealing (metallurgy) business.industry Wide-bandgap semiconductor Analytical chemistry Electrical engineering Electronic Optical and Magnetic Materials Ion Threshold voltage Operating temperature Field-effect transistor Electrical and Electronic Engineering Power MOSFET business Voltage |
| Zdroj: | IEEE Transactions on Electron Devices. 50:471-478 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/ted.2002.808511 |
| Popis: | Planar 4H-SiC accumulation channel field effect transistor (ACCUFET) have been designed, fabricated, and characterized. Detailed design and processing experiments were conducted on relatively large area ACCUFETs to boost their power ratings. A detailed two-dimensional (2-D) design simulation suggests that the optimum spacing between two adjacent p/sup +/ regions is approximately 4 /spl mu/m. A novel process with epitaxial regrowth over ion implanted p/sup +/ base region was developed to achieve a high accumulation layer mobility. Process splits from nitrogen-rich post gate oxidation anneals revealed that the lowest on-resistance and optimum threshold voltage were obtained from N/sub 2/O annealed samples. 550 V blocking voltage with 22 m/spl Omega/-cm/sup 2/ were demonstrated on 2 A 4H-SiC ACCUFETs. Using a newly developed hex-gate design, larger, 20 A 4H-SiC ACCUFETs are presented here with stable high temperature characteristics. In these high-current devices, the threshold voltage decreases linearly from 1.5 V to 0.9 V, while the extracted channel mobility increases from 18 cm/sup 2//V-s to 33.6 cm/sup 2//V-s as the operating temperature is increased from 30/spl deg/C to 200/spl deg/C. |
| Databáze: | OpenAIRE |
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