High-mobility modulation-doped SiGe-channel p-MOSFETs
| Autor: | A.C. Megdanis, Emmanuel F. Crabbe, Phillip J. Restle, S. Verdonckt-Vandebroek, C.L. Stanis, A.C. Warren, J.M.C. Stork, David L. Harame, Bernard S. Meyerson, A.A. Bright, Gerrit Kroesen |
|---|---|
| Rok vydání: | 1991 |
| Předmět: |
Electron mobility
Materials science Silicon business.industry Transconductance Doping Electrical engineering chemistry.chemical_element Germanium Electronic Optical and Magnetic Materials Threshold voltage chemistry Modulation Optoelectronics Field-effect transistor Electrical and Electronic Engineering business |
| Zdroj: | IEEE Electron Device Letters. 12:447-449 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/55.119161 |
| Popis: | A novel subsurface SiGe-channel p-MOSFET is demonstrated in which modulation doping is used to control the threshold voltage without degrading the channel mobility. A novel device design consisting of a graded SiGe channel, an n/sup +/ polysilicon gate, and p/sup +/ modulation doping is used. A boron-doped layer is located underneath the graded and undoped SiGe channel to minimize process sensitivity and maximize transconductance. Low-field hole mobilities of 220 cm/sup 2//V-s at 300 K and 980 cm/sup 2//V-s at 82 K were achieved in functional submicrometer p-MOSFETs. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|