| Autor: |
M.A. Jackson, J.A. Will, K. Capasso |
| Rok vydání: |
2002 |
| Předmět: |
|
| Zdroj: |
Proceedings of the UGIM Symposium, Microelectronics Education for the Future. Twelfth Biennial University/Government/Industry Microelectronics Symposium (Cat. No.97CH36030). |
| DOI: |
10.1109/ugim.1997.616681 |
| Popis: |
Measurement of minority carrier lifetime (/spl tau/), either indirectly via pn diode leakage current or directly from MOS capacitors, is used as a monitor to detect and correct contamination in an university fab. Diodes fabricated utilizing an internal gettering process exhibited improvements in leakage current levels about the wafer center when compared with diodes fabricated sans gettering, indicating the possibility of contamination by outdiffusion of impurities from the tube walls. Surface charge analysis (SCA) of an oxidized silicon wafer detected a 30% decrease in /spl tau/ over a 6 hr N/sub 2/ anneal in the tube used for gettering. The same experiment conducted in a tube contaminated with Zn yielded a 45% drop in lifetime. Both gas sources and RCA clean chemistry are being investigated as possible contamination sources of the getter tube. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
