Electrical conduction and bipolar switching properties in transparent vanadium oxide resistive random access memory (RRAM) devices

Autor:	Chin-Hsiung Liao, Jen-Hwan Tsai, Sean Wu, Kai-Huang Chen
Rok vydání:	2012
Předmět:	Materials science business.industry RF power amplifier chemistry.chemical_element General Chemistry Substrate (electronics) Sputter deposition Oxygen Vanadium oxide Chamber pressure Resistive random-access memory chemistry Optoelectronics General Materials Science business Ohmic contact
Zdroj:	Applied Physics A. 110:211-216
ISSN:	1432-0630 0947-8396
DOI:	10.1007/s00339-012-7116-y
Popis:	In this study, the electrical conduction and bipolar switching properties in transparent vanadium oxide thin films are investigated and discussed. (110)-oriented vanadium oxide thin films were well deposited onto transparent ITO substrates for the possible development of applications in the structure of system-on-panel devices. For the as-deposited vanadium oxide thin films, they were prepared for 1 h by a rf magnetron sputtering method of rf power 130 W, chamber pressure 10 mTorr, substrate temperature 550 °C, and different oxygen concentrations. In addition, the Al/V2O5/ITO device presents reliable and bipolar switching behavior. The on/off ratio and switching cycling of two stable states are found and discussed. We suggest that the current–voltage characteristics are governed by ohmic contact and Poole−Frankel emission transport model mechanisms in low- and high-voltage regions, respectively.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8e4bff5d389e07cdf26cae55ae84a695 https://doi.org/10.1007/s00339-012-7116-y Zobrazit plný text záznamu Full text from SpringerLink