Using capacitance methods for interface trap level density extraction in graphene field-effect devices

Autor:	Daria K. Batmanova, G. I. Zebrev, E. V. Melnik
Rok vydání:	2012
Předmět:	Condensed Matter::Quantum Gases Materials science Differential capacitance Silicon business.industry Graphene Field effect chemistry.chemical_element Fermi energy Capacitance law.invention Quantum capacitance chemistry law Optoelectronics Physics::Chemical Physics business Graphene nanoribbons
Zdroj:	2012 28th International Conference on Microelectronics Proceedings.
Popis:	Methods of extraction of interface trap level density in graphene field-effect devices from the capacitance-voltage measurements are described and discussed. Interrelation with the graphene Fermi velocity extraction is shown. Similarities and differences in interface trap extraction procedure in graphene and silicon field-effect structures are briefly discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8e48c4e5c9c8df726991614ab7e4ac20 https://doi.org/10.1109/miel.2012.6222868 Zobrazit plný text záznamu