Optical characterization of deep states associated with oxidation-induced stacking faults in silicon

Autor:	M. Vandini, I. D. Hawkins, Antonio Castaldini, J.H. Evans, Anthony R. Peaker, Anna Cavallini
Rok vydání:	1994
Předmět:	Materials science Silicon Band gap Mechanical Engineering Stacking chemistry.chemical_element Radiation Condensed Matter Physics Molecular physics Spectral line chemistry Mechanics of Materials Partial dislocations General Materials Science Atomic physics Recombination Burgers vector
Zdroj:	Materials Science and Engineering: B. 24:170-174
ISSN:	0921-5107
Popis:	We have studied the effect of sub-band gap radiation on the defects associated with the Frank partial dislocation (Burgers vector a /3(111)) bounding oxidation-induced stacking faults (OISF) in n-type silicon. We have observed the contrast produced using IR-beam-induced current (IRBIC) and have studied the effect of the modification of the contrast of individual dislocations with below band gap radiation by quenched IR-beam-induced current (QIRBIC). We have compared these spectra with absolute measurements of the photocapacitance cross-section of the dominant deep state associated with the Frank partials. QIRBIC spectra for “clean”, gold-decorated and two levels of copper-decorated samples have been measured. A model of the recombination kinetics is discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8e470303bf34c4d5aa74539400f46379 https://doi.org/10.1016/0921-5107(94)90321-2 Zobrazit plný text záznamu