Autor: |
M. Vandini, I. D. Hawkins, Antonio Castaldini, J.H. Evans, Anthony R. Peaker, Anna Cavallini |
Rok vydání: |
1994 |
Předmět: |
|
Zdroj: |
Materials Science and Engineering: B. 24:170-174 |
ISSN: |
0921-5107 |
Popis: |
We have studied the effect of sub-band gap radiation on the defects associated with the Frank partial dislocation (Burgers vector a /3(111)) bounding oxidation-induced stacking faults (OISF) in n-type silicon. We have observed the contrast produced using IR-beam-induced current (IRBIC) and have studied the effect of the modification of the contrast of individual dislocations with below band gap radiation by quenched IR-beam-induced current (QIRBIC). We have compared these spectra with absolute measurements of the photocapacitance cross-section of the dominant deep state associated with the Frank partials. QIRBIC spectra for “clean”, gold-decorated and two levels of copper-decorated samples have been measured. A model of the recombination kinetics is discussed. |
Databáze: |
OpenAIRE |
Externí odkaz: |
|