Effects of vacuum annealing on carrier transport properties of band gap-tunable semiconducting amorphous Cd–Ga–O thin films
| Autor: | Hiroshi Yanagi, Chiyuki Sato, Yota Kimura |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Band gap Annealing (metallurgy) business.industry Vapour pressure of water Metals and Alloys Analytical chemistry 02 engineering and technology Surfaces and Interfaces 021001 nanoscience & nanotechnology 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid Carbon film Electrical resistivity and conductivity Vacuum annealing 0103 physical sciences Materials Chemistry Optoelectronics Thin film 0210 nano-technology business |
| Zdroj: | Thin Solid Films. 624:29-33 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2017.01.003 |
| Popis: | The effect of vacuum annealing on the amorphous oxide semiconductor Cd–Ga–O system with a tunable band gap was examined. While the amorphous halo peak in XRD patterns of the films with Cd concentration of ~ 70% started sharpening after annealing at a temperature ≥ 200 °C. In contrast, the films with Cd content of ~ 50% and ~ 20% were not crystallized for annealing temperatures up to 700 °C. Carrier concentrations and Hall mobilities of ~ 70% and ~ 50% films were maximized by annealing at 400 °C and 500 °C, respectively, regardless of the properties of the as-deposited films, which were varied because of the unintended variation of deposition conditions such as the residual water vapor pressure in the deposition chamber. The initial electrical conductivity of ~ 20% films widely varied from |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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