GaN epitaxial growth on 4 degree off-axis Si- and C-face 4H-SiC without buffer layers by tri-halide vapor-phase epitaxy with high-speed wafer rotation

Autor:	Yuto Hoshino, Junji Ohara, Kazukuni Hara, Nobuyuki Otake, Shoichi Onda, Shigeyuki Takaki, Daisuke Uematsu, Shinichi Tanishita
Rok vydání:	2019
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Vapor phase General Engineering General Physics and Astronomy Halide Epitaxy Rotation Buffer (optical fiber) Degree (temperature) Face (geometry) Optoelectronics Wafer business
Zdroj:	Japanese Journal of Applied Physics. 58:SC1039
ISSN:	1347-4065 0021-4922
DOI:	10.7567/1347-4065/ab07a8
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8e409986874891fa56c5241bd5c404eb https://doi.org/10.7567/1347-4065/ab07a8 Zobrazit plný text záznamu