High-Brightness InGaN–GaN Power Flip-Chip LEDs

Autor:	Shih-Chang Shei, Shoou-Jinn Chang, Jinn-Kong Sheu, W.S. Chen, A.J. Lin, Tsun-Kai Ko, C.F. Shen, C. T. Kuo, J. M. Tsai, Wei-Chi Lai
Rok vydání:	2009
Předmět:	Materials science Fabrication business.industry Wide-bandgap semiconductor Atomic and Molecular Physics and Optics law.invention Solid-state lighting Optics law Sapphire Surface roughness Optoelectronics business Flip chip Diode Light-emitting diode
Zdroj:	Journal of Lightwave Technology. 27:1985-1989
ISSN:	1558-2213 0733-8724
Popis:	We report the fabrication of InGaN-GaN power flip-chip (FC) light-emitting diodes (LEDs) with a roughened sapphire backside surface prepared by grinding. It was found that we can increase output power of the FC LED by about 35% by roughening the backside surface of the sapphire substrate. The reliability of the proposed device was also better, as compared to power FC LEDs with a conventional flat sapphire backside surface.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8e3f30f83a704a1d92892acb10160b51 https://doi.org/10.1109/jlt.2008.2005849 Zobrazit plný text záznamu