E1-gap resonant enhancement of the Raman scattering from highly strained InAs/InP short-period superlattices
| Autor: | J.L. Brebner, C. A. Tran, R. Leonelli, Remo A. Masut, M. Jouanne |
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| Rok vydání: | 1994 |
| Předmět: |
Materials science
Condensed matter physics Condensed Matter::Other Scattering Phonon Superlattice Exciton Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Condensed Matter::Materials Science symbols.namesake Dispersion relation symbols Atomic layer epitaxy General Materials Science Electrical and Electronic Engineering Raman spectroscopy Raman scattering |
| Zdroj: | Superlattices and Microstructures. 15:391-397 |
| ISSN: | 0749-6036 |
| DOI: | 10.1006/spmi.1994.1076 |
| Popis: | We report a Raman study of confined In As-like and InP-like longitudinal optical and interface phonons in highly strained short-period superlattices grown coherently on (001) InP substrates by Atomic Layer Epitaxy. A resonant enhancement of the InAs Raman scattering cross-section at the E1 gap of InAs appears as the InAs layer thickness increases beyond 2 monolayers. This enhancement indicates that the scattering involves E1 -gap excitons strongly confined in the InAs wells when this gap is created. InAs-like confined longitudinal-optic phonons of A1 and B2 symmetries are observed in both z(x,x)z polarized and z(x,y)z depolarized configurations under InAs E1-gap resonant excitation. This relaxation of the selection rules is analyzed in terms of resonant impurity-induced scattering. It indicates that the symmetry of the exciton wave functions at the L point, which is different from those at the Γ point, allows intraband coupling of heavy-hole and light-hole states via the deformation-potential interaction. |
| Databáze: | OpenAIRE |
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