Crystallization of diamond on the surface of cBN ceramics at high pressures and temperatures
| Autor: | I. A. Petrusha, V. F. Britun, T. I. Smirnova, A. S. Osipov |
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| Rok vydání: | 2004 |
| Předmět: |
Materials science
Incongruent melting Mechanical Engineering Material properties of diamond Nucleation Mineralogy Diamond Recrystallization (metallurgy) General Chemistry engineering.material Electronic Optical and Magnetic Materials law.invention Carbide chemistry.chemical_compound chemistry law Boron nitride Materials Chemistry engineering Electrical and Electronic Engineering Crystallization Composite material |
| Zdroj: | Diamond and Related Materials. 13:666-670 |
| ISSN: | 0925-9635 |
| DOI: | 10.1016/j.diamond.2004.01.007 |
| Popis: | Diamond crystallization in the Al–C system under high static pressures and temperatures has been investigated on the surface of cBN ceramics. High-temperature experiments have been carried out using a toroid-type high-pressure apparatus. A thin layer of the aluminum melt has been produced between graphite and a cubic boron nitride substrate to facilitate the nucleation process. At a pressure of 8 GPa and a temperature of 2270–2470 K range during 60 s a continuous diamond layer 50–200 μm in thickness forms on the ceramic substrate. It is assumed, that in the above temperature range diamond nucleation and growth on a substrate occurs as a result of the incongruent melting of aluminum carbide by the Al4C3→L(Al,C)+C(diamond) reaction followed by the graphite-into-diamond recrystallization via an aluminum-carbon melt. |
| Databáze: | OpenAIRE |
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