Amorphous silicon, amorphous carbon and amorphous silicon carbide deposited by remote plasma chemical vapor deposition
| Autor: | R.M. Young, W.D. Partlow |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Amorphous silicon
Materials science Silicon Physics::Instrumentation and Detectors Metals and Alloys Nanocrystalline silicon chemistry.chemical_element Surfaces and Interfaces Chemical vapor deposition Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid Condensed Matter::Materials Science chemistry.chemical_compound Carbon film chemistry Amorphous carbon Chemical engineering Materials Chemistry Thin film |
| Zdroj: | Thin Solid Films. 213:170-175 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/0040-6090(92)90279-k |
| Popis: | We have deposited thin films of amorphous silicon, amorphous carbon and amorphous silicon carbide in the afterglows of r.f.-excited argon and helium plasmas. The process and film properties of the films were compared for different deposition parameters such as power, temperature, feed gas type, gas flow value and grid configurations. Solid mixtures of silicon and carbon were deposited and characterized over a wide range of compositions and deposition temperatures, and multilayer heterostructures of silicon and SiC were produced both with discrete interfaces and with a rugate-wise continuous variation in the silicon-to-carbon ratio. |
| Databáze: | OpenAIRE |
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